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savantic semiconductor product specification silicon pnp power transistors 2SA1327 d escription with to-220fa package low collector saturation voltage high current capacity applications strobe flash applications audio power amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -50 v v ceo collector-emitter voltage open base -20 v v ebo emitter-base voltage open collector -8 v i c collector current -10 a i cm collector current-peak -20 a i b base current -2 a t c =25 20 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1327 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma , i b =0 -20 v v cesat collector-emitter saturation voltage i c =-8a; i b =-0.4a -0.5 v v be base-emitter on voltage i c =-8a ; v ce =-2v -1.5 v i cbo collector cut-off current v cb =-50v;i e =0 -1.0 a i ebo emitter cut-off current v eb =-8v; i c =0 -1.0 a h fe-1 dc current gain i c =-1a ; v ce =-2v 100 320 h fe -2 dc current gain i c =-8a ; v ce =-2v 70 c ob output capacitance i e =0 ; v cb =-10v; f=1mhz 400 pf f t transition frequency i c =-1a ; v ce =-2v 45 mhz h fe-1 classifications o y 100-200 160-320
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1327 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1327

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